Electronic Warfare (EW)
Electronic warfare systems detect, analyse and interact with signals across increasingly complex and congested RF environments.
CML Micro provides high-performance RF technologies for demanding defence applications where frequency coverage, signal performance and reliability are critical.
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JIS C 0920
JIS C 0920
JIS C 0920
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CMX90A009
CMX90A009 10W 136 – 1000 MHz Power Amplifier
The CMX90A009 is a high efficiency single-stage GaAs HBT power amplifier in thermally enhanced DFN package, delivering +40.0 dBm (10 W) of output power with >60 % efficiency at 435 MHz and 7.4 V.
- Frequency (MHz)
- 136 - 1000
- Gain (dB)
- 17.5
- Psat (dBm)
- 41.5
- Efficiency (%)
- 60%
- Voltage (V)
- 6.0 - 9.5
- Bias Current (mA)
- 136
- RF Match
- Ext / Ext
- Package (mm)
- 4x5 DFN
CMX90A705
CMX90A705 5.5W Ka-Band GaN Power Amplifier
The CMX90A705 is a packaged two-stage Ka band GaN linear power amplifier delivering 37.4 dBm (5.5 W) of saturated power with 16.5 dB of small signal gain.
- Frequency (GHz)
- 27.5 - 31
- Band
- Ka-band
- Gain (dB)
- 16.5
- Psat (dBm)
- 37.4
- IRL/ORL (dB)
- 10 / 9
- Package (mm)
- 4 x 4 QFN
MGA-445940-02
MGA-445940-02 4.4 – 5.9 GHz 10W High Efficiency Linear Power Amplifier
The MGA-445940-02 is a power amplifier with the State-of-the-Art linear power-added-efficiency between 4.4 GHz and 5.9 GHz frequency band.
- Frequency (GHz)
- 4.4 - 5.9
- Gain (dB)
- 14
- Gain Flatness (dB)
- 1
- IRL/ORL (dB)
- 6 / 3
- Pout @ -3 dB (dBm)
- 40
- Pout @ 2.5% EVM
- 34
- Vdd (V)
- 28
- Bias Current (mA)
- 100 - 1200
- Package
- 2
MGA-495940-02
MGA-495940-02 4.4 – 5.9 GHz 10W High Efficiency Linear Power Amplifier
The MGA-495940-02 is a power amplifier with the State-of-the-Art linear power-added-efficiency between 4.4 GHz and 5.9 GHz frequency band.
- Frequency (GHz)
- 4.9 - 5.9
- Gain (dB)
- 14
- Gain Flatness (dB)
- 1
- IRL/ORL (dB)
- 8 / 8
- Pout @ -3 dB (dBm)
- 40
- Pout @ 2.5% EVM
- 33
- Vdd (V)
- 28
- Bias Current (mA)
- 100 - 400
- Package
- 2
MGA-515844-99
MGA-515844-99 5.1 – 5.8 GHz 25W High Efficiency Linear Power Amplifier
The MGA-515844-99 is a power amplifier with the State-of-the-Art linear power-added-efficiency between 5.1 GHz and 5.8 GHz frequency band.
- Frequency (GHz)
- 5.1 - 5.8
- Gain (dB)
- 16
- Gain Flatness (dB)
- 1
- IRL/ORL (dB)
- 10 / 12
- Pout @ -3 dB (dBm)
- 44
- Pout @ 2.5% EVM
- 35
- Vdd (V)
- 28
- Bias Current (mA)
- <2000
- Package
- 99
MMA-005022-M4
MMA-005022-M4 30KHz-50GHz Traveling Wave Amplifier
The MMA-005022-M4 is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with medium output power and high gain over full 30KHz to 50GHz frequency range.
- Frequency (GHz)
- 30 kHz – 50
- Gain (dB)
- 13.5
- P1dB (dBm)
- 22
- P3dB (dBm)
- 25
- Gain Flatness (dB)
- +/- 2.0
- OIP3 (dBm)
- 30
- IRL/ORL (dB)
- 10 / 10
- Voltage (V)
- 7
- Package (mm)
- 4X4 QFN
MMA-005022B
MMA-005022B 30KHz-50GHz Traveling Wave Amplifier
The MMA-005022B is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with medium output power and high gain over full 30KHz to 50GHz frequency range.
- Frequency (GHz)
- 30 kHz – 50
- Gain (dB)
- 13.5
- P1dB (dBm)
- 22
- P3dB (dBm)
- 25
- Gain Flatness (dB)
- +/- 1.0
- OIP3 (dBm)
- 30
- IRL/ORL (dB)
- 15 / 15
- Voltage (V)
- 7
- Package (mm)
- Die
MMA-011015
MMA-011015 1 - 10 GHz GaAs MMIC Medium Power Amplifier
The MMA-011015 is a 1 – 10GHz broadband medium power amplifier realized in advanced GaAs PHEMT technology.
- Frequency (GHz)
- 1 - 10
- Gain (dB)
- 15.0
- P1dB (dBm)
- 16.0
- IRL/ORL (dB)
- 12 / 15
- NF (dB)
- 4.5
- Voltage (V)
- 6
- Bias Current (mA)
- 75
- Package (mm)
- Die
MMA-062020-C3
MMA-062020-C3 6-22GHz, 0.1W Gain Block
The MMA-062020 is a broadband GaAs MMIC general purpose gain block for 19.5dBm saturated maximum output power and high gain over full 6 to 22GHz frequency range.
- Frequency (GHz)
- 6 - 22
- Gain (dB)
- 14.0
- P1dB (dBm)
- 18.5
- IRL/ORL (dB)
- 8 / 10
- OIP3 (dBm)
- 28.0
- Voltage (V)
- 3 - 6
- Bias Current (mA)
- 130
- Package (mm)
- 3×3 QFN
MMA-174321
MMA-174321 17-43GHz, 0.1W Gain Block
The MMA-174321 is a broadband GaAs MMIC general purpose gain block for 0.1-Watt maximum output power and high gain over full 17 to 43GHz frequency range.
- Frequency (GHz)
- 17 - 43
- Gain (dB)
- 21.0
- P1dB (dBm)
- 18.0
- IRL/ORL (dB)
- 8 / 8
- OIP3 (dBm)
- 26.0
- Voltage (V)
- 3 - 5
- Bias Current (mA)
- 150 - 250
- Package (mm)
- Die
MMA-174321-M4
MMA-174321-M4 17 - 43GHz, 0.1W Gain Block
The MMA-174321 is a broadband GaAs MMIC general purpose gain block for 0.1-Watt maximum output power and high gain over full 17 to 43GHz frequency range.
- Frequency (GHz)
- 17 - 43
- Gain (dB)
- 18.0
- P1dB (dBm)
- 21.0
- IRL/ORL (dB)
- 8 / 8
- OIP3 (dBm)
- 26.0
- Voltage (V)
- 3 - 5
- Bias Current (mA)
- 150 - 250
- Package (mm)
- 4×4 QFN
MMA-273336-M5
MMA-273336-M5 27-33GHz 4W MMIC Power Amplifier
The MMIC is a high power amplifier MMIC in a surface mount package designed for use in transmitters that operate at frequencies between 27GHz and 33GHz.
- Frequency (GHz)
- 27 - 33
- Gain (dB)
- 22
- P1dB (dBm)
- 36
- Psat (dBm)
- 36.5
- OIP3 (dBm)
- 38
- IRL/ORL (dB)
- 10
- Voltage (V)
- 6
- Package (mm)
- 5X5 QFN
MwT-11F
MwT-11F High Power, High Linearity GaAs FET
The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm.
- Package Available Sealed/ Hermetic
- 71
- RF Power @12 GHz (dBm)
- 32
- Small Signal Gain @12 GHz (dB)
- 9
- PAE @12GHz (%)
- 40
- Chip Size (µm)
- 775 x 343
- Gate Width (µm)
- 2400
- Gate Pads (each)
- 2
- Drain Pads (each)
- 2
- Replaces
- MwT-11
MwT-1F
MwT-1F 12 GHz High Gain GaAs FET
The MwT-1F is a GaAs MESFET device whose nominal 0.25 micron gate length and 630 micron gate width make it ideally suited to applications requiring high-gain and linearity up to 18 GHz.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 26
- Small Signal Gain @12 GHz (dB)
- 10
- NF @12GHz (dB)
- 2
- Chip Size (µm)
- 775 x 241
- Gate Width (µm)
- 630
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- MwT-1
MwT-3F
MwT-3F 26 GHz High Power GaAs FET
The MwT-3F is a GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited to applications requiring high-gain and linearity in the 500 MHz to 26 GHz frequency range with power outputs ranging from +20 to +22 dBm.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 22
- Small Signal Gain @12 GHz (dB)
- 14
- PAE @12GHz (%)
- 35
- Chip Size (µm)
- 406 x 241
- Gate Width (µm)
- 300
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- MwT-3
MwT-5F
MwT-5F 26 GHz High Gain, Dual Gate GaAs FET
The MwT-5F is a dual gate GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range.
- Package Available Sealed/ Hermetic
- 71
- RF Power @12 GHz (dBm)
- 21
- Small Signal Gain @12 GHz (dB)
- 19
- NF @12GHz (dB)
- 3.5
- Chip Size (µm)
- 406 x 241
- Gate Width (µm)
- 300 Dual
- Gate Pads (each)
- 1
- Drain Pads (each)
- 3
- Replaces
- MwT-5
MwT-7F
MwT-7F 26 GHz Medium Power GaAs FET
The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 21
- Small Signal Gain @12 GHz (dB)
- 15
- NF @12GHz (dB)
- 2
- Chip Size (µm)
- 356 x 241
- Gate Width (µm)
- 250
- Gate Pads (each)
- 2
- Drain Pads (each)
- 2
- Replaces
- MwT-7, S7, LP7
MwT-9F
MwT-9F 18 GHz Medium Power GaAs FET
The MwT-9F is a GaAs MESFET device whose nominal 0.25 micron gate length and 750 micron gate width make it ideally suited to applications requiring medium linear power.
- Package Available Sealed/ Hermetic
- 71
- RF Power @12 GHz (dBm)
- 26.5
- Small Signal Gain @12 GHz (dB)
- 11
- PAE @12GHz (%)
- 35
- Chip Size (µm)
- 419 x 241
- Gate Width (µm)
- 750
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- MwT-9, A9
MwT-PH27F
MwT-PH27F 26 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH27F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 400 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 25
- Small Signal Gain @12 GHz (dB)
- 16
- PAE @12GHz (%)
- 40
- Chip Size (µm)
- 410 x 340
- Gate Width (µm)
- 400
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- QorvoTGF2040
MwT-PH29F
MwT-PH29F 18 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH29F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 800 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 18 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 28.5
- Small Signal Gain @12 GHz (dB)
- 13
- PAE @12GHz (%)
- 45
- Chip Size (µm)
- 410 x 480
- Gate Width (µm)
- 800
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- RFMD FDP750
MwT-PH33F
MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 24
- Small Signal Gain @12 GHz (dB)
- 16
- PAE @12GHz (%)
- 50
- Chip Size (µm)
- 315 x 440
- Gate Width (µm)
- 300
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- N/A
MwT-PH7F
MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 24
- Small Signal Gain @12 GHz (dB)
- 16
- PAE @12GHz (%)
- 60
- Chip Size (µm)
- 365 x 260
- Gate Width (µm)
- 180
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- MwT-PH7
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