MwT-3F

26 GHz High Power GaAs FET

HFETs

MwT-3F

26 GHz High Power GaAs FET

The MwT-3F is a GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited to applications requiring high-gain and linearity in the 500 MHz to 26 GHz frequency range with power outputs ranging from +20 to +22 dBm. MwT-3F is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. All chips are passivated with SiN (Silicon Nitride).

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Technical outline drawing of a MwT FP3 leadframe package, showing lead pads with mounting holes and dimension callouts (overall size 415 x 260)

MwT-3F Diagram

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-11F

MwT-11F High Power, High Linearity GaAs FET

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 32
Small Signal Gain @12 GHz (dB): 9
PAE @12GHz (%): 40
Chip Size (µm): 775 x 343
Gate Width (µm): 2400
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-11

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-1F

MwT-1F 12 GHz High Gain GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 26
Small Signal Gain @12 GHz (dB): 10
NF @12GHz (dB): 2
Chip Size (µm): 775 x 241
Gate Width (µm): 630
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-1

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-3F

MwT-3F 26 GHz High Power GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 14
PAE @12GHz (%): 35
Chip Size (µm): 406 x 241
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-3

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-5F

MwT-5F 26 GHz High Gain, Dual Gate GaAs FET

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 19
NF @12GHz (dB): 3.5
Chip Size (µm): 406 x 241
Gate Width (µm): 300 Dual
Gate Pads (each): 1
Drain Pads (each): 3
Replaces: MwT-5

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-7F

MwT-7F 26 GHz Medium Power GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 15
NF @12GHz (dB): 2
Chip Size (µm): 356 x 241
Gate Width (µm): 250
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-7, S7, LP7

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