MwT-5F

26 GHz High Gain, Dual Gate GaAs FET

HFETs

MwT-5F

26 GHz High Gain, Dual Gate GaAs FET

The MwT-5F is a dual gate GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range. MwT-5F is equally effective for either wideband (e.g. 2 to 26 GHz) or narrow-band applications. All chips are passivated with SiN (Silicon Nitride).

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Technical outline drawing of a MwT FP5 leadframe package, showing lead pads with mounting holes and dimension callouts (overall size 415 x 260)

MwT-5F Diagram

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-11F

MwT-11F High Power, High Linearity GaAs FET

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 32
Small Signal Gain @12 GHz (dB): 9
PAE @12GHz (%): 40
Chip Size (µm): 775 x 343
Gate Width (µm): 2400
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-11

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-1F

MwT-1F 12 GHz High Gain GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 26
Small Signal Gain @12 GHz (dB): 10
NF @12GHz (dB): 2
Chip Size (µm): 775 x 241
Gate Width (µm): 630
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-1

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-3F

MwT-3F 26 GHz High Power GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 14
PAE @12GHz (%): 35
Chip Size (µm): 406 x 241
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-3

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-5F

MwT-5F 26 GHz High Gain, Dual Gate GaAs FET

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 19
NF @12GHz (dB): 3.5
Chip Size (µm): 406 x 241
Gate Width (µm): 300 Dual
Gate Pads (each): 1
Drain Pads (each): 3
Replaces: MwT-5

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-7F

MwT-7F 26 GHz Medium Power GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 15
NF @12GHz (dB): 2
Chip Size (µm): 356 x 241
Gate Width (µm): 250
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-7, S7, LP7

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