Military Radar
Military radar systems use RF signals to detect, locate and track targets across land, sea and air.
CML Micro provides high-performance microwave and millimetre-wave technologies for radar applications requiring precision, reliability and operation at demanding frequencies.
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JIS C 0920
JIS C 0920
JIS C 0920
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CMX90A009
CMX90A009 10W 136 – 1000 MHz Power Amplifier
The CMX90A009 is a high efficiency single-stage GaAs HBT power amplifier in thermally enhanced DFN package, delivering +40.0 dBm (10 W) of output power with >60 % efficiency at 435 MHz and 7.4 V.
- Frequency (MHz)
- 136 - 1000
- Gain (dB)
- 17.5
- Psat (dBm)
- 41.5
- Efficiency (%)
- 60%
- Voltage (V)
- 6.0 - 9.5
- Bias Current (mA)
- 136
- RF Match
- Ext / Ext
- Package (mm)
- 4x5 DFN
MMA-012030
MMA-012030 0.1-20GHz 1W Traveling Wave Amplifier
The MMA-012030 is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with high output power and high gain over 0.1 to 20GHz frequency range.
- Frequency (GHz)
- 0.1 - 20
- Gain (dB)
- 12.5
- P1dB (dBm)
- 27
- P3dB (dBm)
- 29
- Gain Flatness (dB)
- +/- 0.5
- OIP3 (dBm)
- 37
- IRL/ORL (dB)
- 10 / 10
- Voltage (V)
- 12
- Package (mm)
- Die
MMA-012727
MMA-012727 0.1-26.5GHz 0.5W Traveling Wave Amplifier
The MMA-012727 is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with medium output power and high gain over 0.1 to 26.5GHz frequency range.
- Frequency (GHz)
- 0.1 - 26.5
- Gain (dB)
- 12.5
- P1dB (dBm)
- 26
- P3dB (dBm)
- 27
- Gain Flatness (dB)
- +/- 0.5
- OIP3 (dBm)
- 35
- IRL/ORL (dB)
- 11 / 11
- Voltage (V)
- 8 - 12
- Package (mm)
- Die
MMA-020624-M4
MMA-020624-M4 2000-6000 MHz Fully Matched High Dynamic Range Amplifier
The MMA-020624-M4 is a high linearity GaAs MESFET MMIC amplifier utilizing MwT’s proprietary linear device technology.
- Frequency (GHz)
- 2 - 6
- Gain (dB)
- 17
- IRL/ORL (dB)
- 12 / 12
- NF (dB)
- 3.5
- P1dB (dBm)
- 25
- OIP3 (dBm)
- 40
- Voltage (V)
- 8
- Bias Current (mA)
- 250
- Package (mm)
- 4x4 QFN
MMA-062020
MMA-062020 6-22GHz, 0.1W Gain Block
The MMA-062020 is a broadband GaAs MMIC general purpose gain block for 20dBm saturated maximum output power and high gain over full 6 to 22GHz frequency range.
- Frequency (GHz)
- 6 - 20
- Gain (dB)
- 14.0
- P1dB (dBm)
- 18.3
- IRL/ORL (dB)
- 8 / 10
- OIP3 (dBm)
- 28.0
- Voltage (V)
- 3 - 6
- Bias Current (mA)
- 120
- Package (mm)
- Die
MMA-174321
MMA-174321 17-43GHz, 0.1W Gain Block
The MMA-174321 is a broadband GaAs MMIC general purpose gain block for 0.1-Watt maximum output power and high gain over full 17 to 43GHz frequency range.
- Frequency (GHz)
- 17 - 43
- Gain (dB)
- 21.0
- P1dB (dBm)
- 18.0
- IRL/ORL (dB)
- 8 / 8
- OIP3 (dBm)
- 26.0
- Voltage (V)
- 3 - 5
- Bias Current (mA)
- 150 - 250
- Package (mm)
- Die
MMA-174321-M4
MMA-174321-M4 17 - 43GHz, 0.1W Gain Block
The MMA-174321 is a broadband GaAs MMIC general purpose gain block for 0.1-Watt maximum output power and high gain over full 17 to 43GHz frequency range.
- Frequency (GHz)
- 17 - 43
- Gain (dB)
- 18.0
- P1dB (dBm)
- 21.0
- IRL/ORL (dB)
- 8 / 8
- OIP3 (dBm)
- 26.0
- Voltage (V)
- 3 - 5
- Bias Current (mA)
- 150 - 250
- Package (mm)
- 4×4 QFN
MMA-495930-Q4
MMA-495930-Q4 4.9-5.9GHz Fully Matched Medium Power Amplifier
The MMA-495930-Q4 is a high linearity GaAs FET broadband MMIC amplifier utilizing MwT’s proprietary linear device technology.
- Frequency (GHz)
- 4,9 -5.9
- Gain (dB)
- 20
- P1dB (dBm)
- 30
- OIP3 (dBm)
- 45
- IRL/ORL (dB)
- 8 / 8
- Voltage (V)
- 7.5
- Package (mm)
- 4 X 4 QFN
MwT-7F
MwT-7F 26 GHz Medium Power GaAs FET
The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 21
- Small Signal Gain @12 GHz (dB)
- 15
- NF @12GHz (dB)
- 2
- Chip Size (µm)
- 356 x 241
- Gate Width (µm)
- 250
- Gate Pads (each)
- 2
- Drain Pads (each)
- 2
- Replaces
- MwT-7, S7, LP7
MwT-PH7F
MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 24
- Small Signal Gain @12 GHz (dB)
- 16
- PAE @12GHz (%)
- 60
- Chip Size (µm)
- 365 x 260
- Gate Width (µm)
- 180
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- MwT-PH7
MwT-PH8F
MwT-PH8F 18 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH8F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 1200 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 18 GHz frequency range.
- Package Available Sealed/ Hermetic
- 71
- RF Power @12 GHz (dBm)
- 30
- Small Signal Gain @12 GHz (dB)
- 13
- PAE @12GHz (%)
- 40
- Chip Size (µm)
- 315 x 690
- Gate Width (µm)
- 1200
- Gate Pads (each)
- 2
- Drain Pads (each)
- 2
- Replaces
- MwT-PH8
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