SμRF Discretes

Product	Description	Package Available Sealed/ Hermetic	RF Power @12 GHz (dBm)	Small Signal Gain @12 GHz (dB)	PAE @12GHz (%)	Chip Size (µm)	Gate Width (µm)	Gate Pads (each)	Drain Pads (each)	Replaces	NF @12GHz (dB)
MwT-11F	MwT-11F High Power, High Linearity GaAs FET	71	32	9	40	775 x 343	2400	2	2	MwT-11
MwT-1F	MwT-1F 12 GHz High Gain GaAs FET	70 / 71 / 73	26	10		775 x 241	630	1	1	MwT-1	2
MwT-3F	MwT-3F 26 GHz High Power GaAs FET	70 / 71 / 73	22	14	35	406 x 241	300	1	1	MwT-3
MwT-5F	MwT-5F 26 GHz High Gain, Dual Gate GaAs FET	71	21	19		406 x 241	300 Dual	1	3	MwT-5	3.5
MwT-7F	MwT-7F 26 GHz Medium Power GaAs FET	70 / 71 / 73	21	15		356 x 241	250	2	2	MwT-7, S7, LP7	2
MwT-9F	MwT-9F 18 GHz Medium Power GaAs FET	71	26.5	11	35	419 x 241	750	1	1	MwT-9, A9

Product	Description	Package Available Sealed/ Hermetic	RF Power @12 GHz (dBm)	Small Signal Gain @12 GHz (dB)	PAE @12GHz (%)	Chip Size (µm)	Gate Width (µm)	Gate Pads (each)	Drain Pads (each)	Replaces
MwT-PH11	MwT-PH11 F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT	71	32	12	45	775 x 365	2400	2	2	MwT-PH11
MwT-PH15F	MwT-PH15F 28 GHz Medium Power AlGaAs/InGaAs pHEMT	71	28	16	60	850 x 260	630	4	2	MwT-PH15
MwT-PH27F	MwT-PH27F 26 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	25	16	40	410 x 340	400	1	1	QorvoTGF2040
MwT-PH28F	MwT-PH28F 26 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	27	15	45	410 x 340	600	1	1	QorvoTGF2060
MwT-PH29F	MwT-PH29F 18 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	28.5	13	45	410 x 480	800	1	1	RFMD FDP750
MwT-PH30F	MwT-PH30F 18 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	28	14	45	410 x 540	800	2	2	QorvoTGF2080
MwT-PH31F	MwT-PH31F 18 GHz Medium Power AlGaAs/InGaAs pHEMT	71	30	13	45	540 x 410	1200	2	2	QorvoTGF2120
MwT-PH32F	MwT-PH32F 12 GHz High Power AlGaAs/InGaAs pHEMT	71	31	13	45	540 x 410	1600	2	2	QorvoTGF2160
MwT-PH33F	MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	24	16	50	315 x 440	300	1	1	N/A
MwT-PH3F	MwT-PH3F 28 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	24	16	60	410 x 340	300	1	1	N/A
MwT-PH4F	MwT-PH4F 28 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	22	16	60	365 x 260	180	1	1	MwT-PH4
MwT-PH7F	MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	24	16	60	365 x 260	180	1	1	MwT-PH7
MwT-PH8F	MwT-PH8F 18 GHz Medium Power AlGaAs/InGaAs pHEMT	71	30	13	40	315 x 690	1200	2	2	MwT-PH8
MwT-PH9F	MwT-PH9F 26 GHz Medium Power AlGaAs/InGaAs pHEMT	70 / 71 / 73	27	14	50	480 x 315	750	1	1	MwT-PH9

The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm.

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 32
Small Signal Gain @12 GHz (dB): 9
PAE @12GHz (%): 40
Chip Size (µm): 775 x 343
Gate Width (µm): 2400
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-11

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The MwT-1F is a GaAs MESFET device whose nominal 0.25 micron gate length and 630 micron gate width make it ideally suited to applications requiring high-gain and linearity up to 18 GHz.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 26
Small Signal Gain @12 GHz (dB): 10
NF @12GHz (dB): 2
Chip Size (µm): 775 x 241
Gate Width (µm): 630
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-1

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The MwT-3F is a GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited to applications requiring high-gain and linearity in the 500 MHz to 26 GHz frequency range with power outputs ranging from +20 to +22 dBm.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 14
PAE @12GHz (%): 35
Chip Size (µm): 406 x 241
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-3

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The MwT-5F is a dual gate GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range.

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 19
NF @12GHz (dB): 3.5
Chip Size (µm): 406 x 241
Gate Width (µm): 300 Dual
Gate Pads (each): 1
Drain Pads (each): 3
Replaces: MwT-5

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The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 15
NF @12GHz (dB): 2
Chip Size (µm): 356 x 241
Gate Width (µm): 250
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-7, S7, LP7

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The MwT-9F is a GaAs MESFET device whose nominal 0.25 micron gate length and 750 micron gate width make it ideally suited to applications requiring medium linear power.

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 26.5
Small Signal Gain @12 GHz (dB): 11
PAE @12GHz (%): 35
Chip Size (µm): 419 x 241
Gate Width (µm): 750
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-9, A9

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The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range.

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 32
Small Signal Gain @12 GHz (dB): 12
PAE @12GHz (%): 45
Chip Size (µm): 775 x 365
Gate Width (µm): 2400
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-PH11

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The MwT-PH15F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 630 micron gate width make it ideally suited for applications requiring high-gain and medium power with frequency up to 28 GHz.

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 28
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 850 x 260
Gate Width (µm): 630
Gate Pads (each): 4
Drain Pads (each): 2
Replaces: MwT-PH15

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The MwT-PH27F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 400 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 25
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 40
Chip Size (µm): 410 x 340
Gate Width (µm): 400
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: QorvoTGF2040

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The MwT-PH28F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 600 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 27
Small Signal Gain @12 GHz (dB): 15
PAE @12GHz (%): 45
Chip Size (µm): 410 x 340
Gate Width (µm): 600
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: QorvoTGF2060

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The MwT-PH29F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 800 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 18 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 28.5
Small Signal Gain @12 GHz (dB): 13
PAE @12GHz (%): 45
Chip Size (µm): 410 x 480
Gate Width (µm): 800
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: RFMD FDP750

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The MwT-PH30F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 800 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 18 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 28
Small Signal Gain @12 GHz (dB): 14
PAE @12GHz (%): 45
Chip Size (µm): 410 x 540
Gate Width (µm): 800
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: QorvoTGF2080

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The MwT-PH31F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 1200 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 18 GHz frequency range.

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 30
Small Signal Gain @12 GHz (dB): 13
PAE @12GHz (%): 45
Chip Size (µm): 540 x 410
Gate Width (µm): 1200
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: QorvoTGF2120

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The MwT-PH32F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 1600 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12.0 GHz frequency range.

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 31
Small Signal Gain @12 GHz (dB): 13
PAE @12GHz (%): 45
Chip Size (µm): 540 x 410
Gate Width (µm): 1600
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: QorvoTGF2160

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The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 50
Chip Size (µm): 315 x 440
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: N/A

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The MwT-PH3F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 410 x 340
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: N/A

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The MwT-PH4F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 180 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 365 x 260
Gate Width (µm): 180
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH4

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The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 365 x 260
Gate Width (µm): 180
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH7

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The MwT-PH8F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 1200 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 18 GHz frequency range.

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 30
Small Signal Gain @12 GHz (dB): 13
PAE @12GHz (%): 40
Chip Size (µm): 315 x 690
Gate Width (µm): 1200
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-PH8

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The MwT-PH9F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 750 micron gate width make it ideally suited for applications requiring high-gain and power up to 18 GHz frequency range with power outputs ranging from 400 to 500 milli-watts.

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 27
Small Signal Gain @12 GHz (dB): 14
PAE @12GHz (%): 50
Chip Size (µm): 480 x 315
Gate Width (µm): 750
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH9