MwT-PH31F

18 GHz Medium Power AlGaAs/InGaAs pHEMT

pHEMTs

MwT-PH31F

18 GHz Medium Power AlGaAs/InGaAs pHEMT

The MwT-PH31F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 1200 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 18 GHz frequency range. The device is equally effective for either wideband or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability.

Download Datasheet

Technical outline drawing of a MwT PH31F leadframe package, showing the pin layout, ground tabs, and dimension callouts (overall size 530 x 375)

MwT-PH31F Diagram

Need more information? Contact us here

Quick Product Selector

Find the part you need for your application using our product selector.

View Full Product Selector

SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH7F

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 365 x 260
Gate Width (µm): 180
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH7

Explore

SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH33F

MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 50
Chip Size (µm): 315 x 440
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: N/A

Explore

SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH3F

MwT-PH3F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 410 x 340
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: N/A

Explore

SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH4F

MwT-PH4F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 365 x 260
Gate Width (µm): 180
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH4

Explore

SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH32F

MwT-PH32F 12 GHz High Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 31
Small Signal Gain @12 GHz (dB): 13
PAE @12GHz (%): 45
Chip Size (µm): 540 x 410
Gate Width (µm): 1600
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: QorvoTGF2160

Explore

Looking for extra information?

Get in touch with your questions and one of the team will get in touch shortly.

CML Microcircuits Ltd

sales@cmlmicro.com

+44 1621 875 500

Looking for one of our distributors?
Find your local distributor here

Get in touch

"*" indicates required fields

CML Microcircuits (UK) Ltd
Oval Park, Langford, Maldon, Essex,
CM9 6WG, England

+44 1621 875 500 sales@cmlmicro.com

CML Micro is a world-leader in the design, development and supply of mixed-signal, RF and microwave semiconductors for global communications markets.

© CML Micro 2026. All Rights Reserved

Designed & Developed by