Test & Measurement
From developing a new radio to maintaining a communications network, engineers need to accurately generate, capture and analyse RF signals.
CML Micro provides precision RF and mixed-signal technologies for professional test and measurement equipment.
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JIS C 0920
JIS C 0920
JIS C 0920
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CMX90G702
CMX90G702 Positive Gain Slope Amplifier +2dB
The CMX90G702 is a low-power 50 Ω gain block suitable for a wide variety of wireless applications operating in the 6 – 18 GHz frequency range.
- Frequency (GHz)
- 6 - 18
- Gain (dB)
- 9.1 - 11.1
- P1dB (dBm)
- 9.5
- OIP3 (dBm)
- 18.5
- NF (dB)
- 3.0
- Voltage (V)
- 2 - 5
- Bias Current (mA)
- 22
- Package (mm)
- 3×3 QFN
MMA-005022-M4
MMA-005022-M4 30KHz-50GHz Traveling Wave Amplifier
The MMA-005022-M4 is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with medium output power and high gain over full 30KHz to 50GHz frequency range.
- Frequency (GHz)
- 30 kHz – 50
- Gain (dB)
- 13.5
- P1dB (dBm)
- 22
- P3dB (dBm)
- 25
- Gain Flatness (dB)
- +/- 2.0
- OIP3 (dBm)
- 30
- IRL/ORL (dB)
- 10 / 10
- Voltage (V)
- 7
- Package (mm)
- 4X4 QFN
MMA-005022B
MMA-005022B 30KHz-50GHz Traveling Wave Amplifier
The MMA-005022B is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with medium output power and high gain over full 30KHz to 50GHz frequency range.
- Frequency (GHz)
- 30 kHz – 50
- Gain (dB)
- 13.5
- P1dB (dBm)
- 22
- P3dB (dBm)
- 25
- Gain Flatness (dB)
- +/- 1.0
- OIP3 (dBm)
- 30
- IRL/ORL (dB)
- 15 / 15
- Voltage (V)
- 7
- Package (mm)
- Die
MMA-012727
MMA-012727 0.1-26.5GHz 0.5W Traveling Wave Amplifier
The MMA-012727 is a broadband GaAs MMIC Traveling Wave Amplifier (TWA) with medium output power and high gain over 0.1 to 26.5GHz frequency range.
- Frequency (GHz)
- 0.1 - 26.5
- Gain (dB)
- 12.5
- P1dB (dBm)
- 26
- P3dB (dBm)
- 27
- Gain Flatness (dB)
- +/- 0.5
- OIP3 (dBm)
- 35
- IRL/ORL (dB)
- 11 / 11
- Voltage (V)
- 8 - 12
- Package (mm)
- Die
MMA-062020
MMA-062020 6-22GHz, 0.1W Gain Block
The MMA-062020 is a broadband GaAs MMIC general purpose gain block for 20dBm saturated maximum output power and high gain over full 6 to 22GHz frequency range.
- Frequency (GHz)
- 6 - 20
- Gain (dB)
- 14.0
- P1dB (dBm)
- 18.3
- IRL/ORL (dB)
- 8 / 10
- OIP3 (dBm)
- 28.0
- Voltage (V)
- 3 - 6
- Bias Current (mA)
- 120
- Package (mm)
- Die
MMA-062020-C3
MMA-062020-C3 6-22GHz, 0.1W Gain Block
The MMA-062020 is a broadband GaAs MMIC general purpose gain block for 19.5dBm saturated maximum output power and high gain over full 6 to 22GHz frequency range.
- Frequency (GHz)
- 6 - 22
- Gain (dB)
- 14.0
- P1dB (dBm)
- 18.5
- IRL/ORL (dB)
- 8 / 10
- OIP3 (dBm)
- 28.0
- Voltage (V)
- 3 - 6
- Bias Current (mA)
- 130
- Package (mm)
- 3×3 QFN
MMA-174321
MMA-174321 17-43GHz, 0.1W Gain Block
The MMA-174321 is a broadband GaAs MMIC general purpose gain block for 0.1-Watt maximum output power and high gain over full 17 to 43GHz frequency range.
- Frequency (GHz)
- 17 - 43
- Gain (dB)
- 21.0
- P1dB (dBm)
- 18.0
- IRL/ORL (dB)
- 8 / 8
- OIP3 (dBm)
- 26.0
- Voltage (V)
- 3 - 5
- Bias Current (mA)
- 150 - 250
- Package (mm)
- Die
MMA-212734D-M5
MMA-212734D-M5 21-27GHz, 3W Power Amplifier
The MMA-212734D-M5 is a GaAs MMIC linear power amplifier with 3-Watt output power and high gain of 25dB over full 21 to 27GHz frequency range.
- Frequency (GHz)
- 21 - 27
- Gain (dB)
- 25
- P1dB (dBm)
- 33
- Psat (dBm)
- 34
- IRL/ORL (dB)
- 15 / 15
- Voltage (V)
- 6
- Package (mm)
- 5X5 QFN
MwT-7F
MwT-7F 26 GHz Medium Power GaAs FET
The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 21
- Small Signal Gain @12 GHz (dB)
- 15
- NF @12GHz (dB)
- 2
- Chip Size (µm)
- 356 x 241
- Gate Width (µm)
- 250
- Gate Pads (each)
- 2
- Drain Pads (each)
- 2
- Replaces
- MwT-7, S7, LP7
MwT-PH28F
MwT-PH28F 26 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH28F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 600 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.
- Package Available Sealed/ Hermetic
- 70 / 71 / 73
- RF Power @12 GHz (dBm)
- 27
- Small Signal Gain @12 GHz (dB)
- 15
- PAE @12GHz (%)
- 45
- Chip Size (µm)
- 410 x 340
- Gate Width (µm)
- 600
- Gate Pads (each)
- 1
- Drain Pads (each)
- 1
- Replaces
- QorvoTGF2060
MwT-PH31F
MwT-PH31F 18 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH31F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 1200 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 18 GHz frequency range.
- Package Available Sealed/ Hermetic
- 71
- RF Power @12 GHz (dBm)
- 30
- Small Signal Gain @12 GHz (dB)
- 13
- PAE @12GHz (%)
- 45
- Chip Size (µm)
- 540 x 410
- Gate Width (µm)
- 1200
- Gate Pads (each)
- 2
- Drain Pads (each)
- 2
- Replaces
- QorvoTGF2120
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