MwT-9F

18 GHz Medium Power GaAs FET

HFETs

MwT-9F

18 GHz Medium Power GaAs FET

The MwT-9F is a GaAs MESFET device whose nominal 0.25 micron gate length and 750 micron gate width make it ideally suited to applications requiring medium linear power. It can be easily matched as the driver stage in high power communications amplifiers or in broad-band military amplifiers. All chips are passivated with SiN (Silicon Nitride).

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Technical outline drawing of a MwT FP9 leadframe package, showing the pin layout, ground tab, and dimension callouts (overall size 485 x 315)

MwT-9F Diagram

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-11F

MwT-11F High Power, High Linearity GaAs FET

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 32
Small Signal Gain @12 GHz (dB): 9
PAE @12GHz (%): 40
Chip Size (µm): 775 x 343
Gate Width (µm): 2400
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-11

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-1F

MwT-1F 12 GHz High Gain GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 26
Small Signal Gain @12 GHz (dB): 10
NF @12GHz (dB): 2
Chip Size (µm): 775 x 241
Gate Width (µm): 630
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-1

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-3F

MwT-3F 26 GHz High Power GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 14
PAE @12GHz (%): 35
Chip Size (µm): 406 x 241
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-3

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-5F

MwT-5F 26 GHz High Gain, Dual Gate GaAs FET

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 19
NF @12GHz (dB): 3.5
Chip Size (µm): 406 x 241
Gate Width (µm): 300 Dual
Gate Pads (each): 1
Drain Pads (each): 3
Replaces: MwT-5

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-7F

MwT-7F 26 GHz Medium Power GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 15
NF @12GHz (dB): 2
Chip Size (µm): 356 x 241
Gate Width (µm): 250
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-7, S7, LP7

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