MwT-11F

High Power, High Linearity GaAs FET

HFETs

MwT-11F

High Power, High Linearity GaAs FET

The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm. The device has very good linearity and power added efficiency. All chips are passivated with SiN (Silicon Nitride).

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MwT-11F Diagram

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-11F

MwT-11F High Power, High Linearity GaAs FET

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 32
Small Signal Gain @12 GHz (dB): 9
PAE @12GHz (%): 40
Chip Size (µm): 775 x 343
Gate Width (µm): 2400
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-11

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-1F

MwT-1F 12 GHz High Gain GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 26
Small Signal Gain @12 GHz (dB): 10
NF @12GHz (dB): 2
Chip Size (µm): 775 x 241
Gate Width (µm): 630
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-1

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-3F

MwT-3F 26 GHz High Power GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 14
PAE @12GHz (%): 35
Chip Size (µm): 406 x 241
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-3

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-5F

MwT-5F 26 GHz High Gain, Dual Gate GaAs FET

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 19
NF @12GHz (dB): 3.5
Chip Size (µm): 406 x 241
Gate Width (µm): 300 Dual
Gate Pads (each): 1
Drain Pads (each): 3
Replaces: MwT-5

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-7F

MwT-7F 26 GHz Medium Power GaAs FET

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 21
Small Signal Gain @12 GHz (dB): 15
NF @12GHz (dB): 2
Chip Size (µm): 356 x 241
Gate Width (µm): 250
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: MwT-7, S7, LP7

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CM9 6WG, England

+44 1621 875 500 sales@cmlmicro.com

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