MMG-121543-S5

20 Watt 1.2-1.5 GHz GaN Power Amplifier

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GaN High Power Amplifiers

MMG-121543-S5

20 Watt 1.2-1.5 GHz GaN Power Amplifier

The MMG-121543-S5 is a high performance Gallium Nitride (GaN) power amplifier. The MMG-121543-S5 provides >20W of saturated output power, 50% poweradded efficiency and 24.5 dB of large-signal gain between 1.2 GHz and 1.5 GHz. The RF input and RF output are matched to 50 ohms. Ideal applications include wireless mesh networks, point-to-point microwave data links, military wireless communications, telemetry, and avionics.

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Block diagram of a two-stage RF amplifier in a QFN package, showing RF IN and RF OUT either side of two cascaded amplifier stages

MMG-121543 Diagram

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3D rendered image of a SµRF branded SOIC-8 packaged amplifier chip against a dark circuit-board background

MMG-121543-S5

MMG-121543-S5 20 Watt 1.2-1.5 GHz GaN Power Amplifier

Key Features

Frequency (GHz): 1.2 - 1.5
Band: L-band
DC Power to maintain IM3 (W): 20
Gain (dB): 28.5
Psat (dBm): 43
IRL/ORL (dB): 11 / 13
Package (mm): 5 x 5 QFN

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3D rendered image of a SµRF branded SOIC-8 packaged amplifier chip against a dark circuit-board background

MGA-515844-99

MGA-515844-99 5.1 – 5.8 GHz 25W High Efficiency Linear Power Amplifier

Key Features

Frequency (GHz): 5.1 - 5.8
Gain (dB): 16
Gain Flatness (dB): 1
IRL/ORL (dB): 10 / 12
Pout @ -3 dB (dBm): 44
Pout @ 2.5% EVM: 35
Vdd (V): 28
Bias Current (mA): <2000
Package: 99

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3D rendered image of a SµRF branded SOIC-8 packaged amplifier chip against a dark circuit-board background

MGA-718540-HP3

MGA-718540-HP3 7.1 – 8.5 GHz 10W High Efficiency GaN Power Amplifier

Key Features

Frequency (GHz): 7.1 - 8.5
Gain (dB): 14
Gain Flatness (dB): 1
IRL/ORL (dB): 10 / 7
Pout @ -3 dB (dBm): 42
Vdd (V): 28
Bias Current (mA): 1300
Package: HP3

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3D rendered image of a SµRF branded SOIC-8 packaged amplifier chip against a dark circuit-board background

MGA-718544-HP3

MGA-718544-HP3 7.1 – 8.5 GHz 25W GaN Power Amplifier

Key Features

Frequency (GHz): 7.1 - 8.5
Gain (dB): 13.5
Gain Flatness (dB): 1
IRL/ORL (dB): 4.5 / 6
Pout @ -3 dB (dBm): 44
Vdd (V): 28
Bias Current (mA): 2400
Package: HP3

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3D rendered image of a SµRF branded SOIC-8 packaged amplifier chip against a dark circuit-board background

MGA-495940-02

MGA-495940-02 4.4 – 5.9 GHz 10W High Efficiency Linear Power Amplifier

Key Features

Frequency (GHz): 4.9 - 5.9
Gain (dB): 14
Gain Flatness (dB): 1
IRL/ORL (dB): 8 / 8
Pout @ -3 dB (dBm): 40
Pout @ 2.5% EVM: 33
Vdd (V): 28
Bias Current (mA): 100 - 400
Package: 2

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CM9 6WG, England

+44 1621 875 500 sales@cmlmicro.com

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