MwT-PH33F

26 GHz Medium Power AlGaAs/InGaAs pHEMT

pHEMTs

MwT-PH33F

26 GHz Medium Power AlGaAs/InGaAs pHEMT

The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability.

Technical outline drawing of a MwT PH33F leadframe package, showing the pad layout and dimension callouts (overall size 415 x 315)

MwT-PH33F Diagram

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH7F

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 365 x 260
Gate Width (µm): 180
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH7

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH33F

MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 50
Chip Size (µm): 315 x 440
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: N/A

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH3F

MwT-PH3F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 410 x 340
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: N/A

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH4F

MwT-PH4F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 365 x 260
Gate Width (µm): 180
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH4

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH32F

MwT-PH32F 12 GHz High Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 31
Small Signal Gain @12 GHz (dB): 13
PAE @12GHz (%): 45
Chip Size (µm): 540 x 410
Gate Width (µm): 1600
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: QorvoTGF2160

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