MwT-PH32F

12 GHz High Power AlGaAs/InGaAs pHEMT

pHEMTs

MwT-PH32F

12 GHz High Power AlGaAs/InGaAs pHEMT

The MwT-PH32F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 1600 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12.0 GHz frequency range. The device is equally effective for either wideband or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability.

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Technical outline drawing of a MwT PH32F leadframe package, showing the pin layout, ground tabs, and dimension callouts (overall width 530)

MwT-PH32F Diagram

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH7F

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 365 x 260
Gate Width (µm): 180
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH7

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH33F

MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 50
Chip Size (µm): 315 x 440
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: N/A

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH3F

MwT-PH3F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 24
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 410 x 340
Gate Width (µm): 300
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: N/A

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH4F

MwT-PH4F 28 GHz Medium Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 70 / 71 / 73
RF Power @12 GHz (dBm): 22
Small Signal Gain @12 GHz (dB): 16
PAE @12GHz (%): 60
Chip Size (µm): 365 x 260
Gate Width (µm): 180
Gate Pads (each): 1
Drain Pads (each): 1
Replaces: MwT-PH4

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SµRF branded gold semiconductor die next to a SOT-23 packaged discrete component, shown against a dark circuit-board background

MwT-PH32F

MwT-PH32F 12 GHz High Power AlGaAs/InGaAs pHEMT

Key Features

Package Available Sealed/ Hermetic: 71
RF Power @12 GHz (dBm): 31
Small Signal Gain @12 GHz (dB): 13
PAE @12GHz (%): 45
Chip Size (µm): 540 x 410
Gate Width (µm): 1600
Gate Pads (each): 2
Drain Pads (each): 2
Replaces: QorvoTGF2160

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