GaAs / GaN

Working with leading compound semiconductor foundries, CML Micro develops high-performance GaAs and GaN solutions for RF, microwave and mmWave applications requiring exceptional efficiency, linearity and power density. 

GaAs & GaN Technologies

Selecting the right semiconductor process is one of the most important decisions in RF and microwave design. Different technologies offer different trade-offs in power, efficiency, linearity, bandwidth and thermal performance, meaning no single process is optimal for every application.

As a fabless semiconductor manufacturer, CML Micro is not restricted to a single fabrication process. Instead, we work with leading semiconductor foundries worldwide, allowing us to select the most appropriate technology based on the specific requirements of each application. This approach enables us to optimise performance, integration, efficiency and cost across a broad range of wireless systems.

Our experience spans, GaAs and GaN technologies, including GaAs HBT, HFET and pHEMT processes, as well as GaN-on-SiC solutions for high-power and high-frequency applications. These technologies support everything from low-power wireless devices and communications systems to satellite infrastructure, phased arrays and advanced defence platforms.

By combining deep RF expertise with the flexibility of a fabless business model, CML Micro can match the right semiconductor technology to the application, delivering solutions optimised for real-world performance rather than constrained by a single manufacturing process. As wireless systems continue to evolve towards higher frequencies, wider bandwidths and greater power efficiency, this technology-agnostic approach remains central to our innovation strategy.

Experience across Semiconductor Materials

CML Micro has decades of experience designing RF and microwave components across a wide range of semiconductor technologies.