The MwT-PH9F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 750 micron gate width make it ideally suited for applications requiring high-gain and power up to 18 GHz frequency range with power outputs ranging from 400 to 500 milli-watts. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability.