SµRF RFICs, MMICs & FETs
MwT-PH15F 28 GHz Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH15F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 630 micron gate width make it ideally suited for applications requiring high-gain and medium power with frequency up to 28 GHz. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability.
Features
- 28.5 dBm typical Output Power at 18 GHz
- 12 dB typical Small Signal Gain at 18 GHz
- 45% typical PAE at 18 GHz
- 0.25 x 630 Micron Refractory Metal/Gold Gate
- Excellent for Power, Gain, and High Power Added Efficiency
Applications
- Commercial, Military, Hi-Rel Space Applications