SµRF RFICs, MMICs & FETs
MwT-PH11 F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT
The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range.
The device is equally effective for either wideband or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability.
Features
- • 33 dBm of Power at 12 GHz
- 12 dB Small Signal Gain at 12 GHz
- 45% PAE at 12 GHz
- 0.25 x 2400 Micron Refractory Metal/Gold Gate
- Excellent for High Power, and High Power Added Efficiency
- Available with or without via holes
Applications
- Commercial, Military, Hi-Rel Space Applications