SµRF RFICs, MMICs & FETs
MwT-9F 18 GHz Medium Power GaAs FET
The MwT-9F is a GaAs MESFET device whose nominal 0.25 micron gate length and 750 micron gate width make it ideally suited to applications requiring medium linear power. It can be easily matched as the driver stage in high power communications amplifiers or in broad-band military amplifiers. All chips are passivated with SiN (Silicon Nitride).
Features
- 26.5 dBm Output Power at 12 GHz
- 11 dB Small Signal Gain at 12 GHz
- 0.25 Micron Refractory Metal/Gold Gate
- 750 Micron Gate Width
- Choice of Chip and Three Package Types
Applications
- Medium Linear Power Applications
- Commercial, Military, Hi-Rel Space Applications