SµRF RFICs, MMICs & FETs
MwT-7F 26 GHz Medium Power GaAs FET
The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. MwT-7F is equally effective for either wideband (e.g., 6 to 18 GHz) or narrow-band applications. Processing which guarantees low phase noise makes the MwT-7F particularly attractive for oscillator applications. All chips are passivated with SiN (Silicon Nitride).
Features
- 21 dBm Output Power at 12 GHz
- 15 dB Small Signal Gain at 12 GHz
- 0.25 Micron Refractory Metal/Gold Gate
- 50 Micron Gate Width
- Choice of Chip and Three Package Types
Applications
- High Linear Gain or Oscillator Applications
- Commercial, Military, Hi-Rel Space Applications