SµRF RFICs, MMICs & FETs
MwT-3F 26 GHz High Power GaAs FET
The MwT-3F is a GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited to applications requiring high-gain and linearity in the 500 MHz to 26 GHz frequency range with power outputs ranging from +20 to +22 dBm. MwT-3F is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. All chips are passivated with SiN (Silicon Nitride).
Features
- 12 dB Small Gain at 18 GHz
- 22 dBm Output Power at 18 GHz
- Excellent for High Linearity Amplifier Applications
- Ideal for Commercial, Military, Hi-Rel Space Applications
- 0.25 Micron Refractory Metal/Gold Gate
- 300 Micron Gate Width
- Choice of Chip and Three Package Types
Applications
- High Linearity Amplifier Applications
- Commercial, Military, Hi-Rel Space Applications