SµRF RFICs, MMICs & FETs
MwT-1F 12 GHz High Gain GaAs FET
The MwT-1F is a GaAs MESFET device whose nominal 0.25 micron gate length and 630 micron gate width make it ideally suited to applications requiring high-gain and linearity up to 18 GHz. MwT-1F is equally effective for either wideband (e.g. 2 to 6 GHz) or narrow-band applications. All chips are passivated with SiN (Silicon Nitride).
Features
- 10 dB Gain at 12 GHz
- 26 dBm Output Power at 18 GHz
- Excellent for High Linearity Amplifier Applications
- Ideal for Commercial, Military, Hi-Rel Space Applications
- 0.25 Micron Refractory Metal/Gold Gate
- 630 Micron Gate Width
- Choice of Chip and Three Package Types
Applications
- High Linearity Amplifier Applications
- Commercial, Military, Hi-Rel Space Applications