SµRF RFICs, MMICs & FETs
MwT-11F High Power, High Linearity GaAs FET
The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm. The device has very good linearity and power added efficiency. All chips are passivated with SiN (Silicon Nitride).
Features
- 32 dBm Output Power at 8 GHz
- 9 dB Typical Small Signal Gain at 8 GHz
- 0.25 x 2400 Micron Refractory Metal/Gold Gate
- Choice of Chip and One Package Type
Applications
- Linear High Power and High Power Added Efficiency Applications
- Commercial, Military, Hi-Rel Space Applications